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| Transys Electronics LIMITED SOT-23 Formed SMD Package BF820 BF822 SILICON EPITAXIAL TRANSISTORS N-P-N transistors Marking BF820 = 1V BF822 = 1X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector-emitter voltage (RBE = 2,7 kW ) Collector current (peak value) Total power dissipation up to Tamb = 25 C Junction temperature D.C. current gain IC = 25 mA; VCE = 20 V Feedback capacitance at f = 1 MHz IC = 0; VCE = 30 V Transition frequency at f = 35 MHz IC = 10mA; VCE = 10 V VCB0 VCE0 VCER ICM Ptot Tj hFE Cre fT BF820 max. 300 max. - max. 300 max. max. max. > < > BF822 250 V 250 V --V mA mW C 100 250 150 50 1,6 60 pF MHz BF820 BF822 RATINGS (at TA = 25C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector-emitter voltage (RBE = 2,7 kW ) Emitter-base voltage (open collector) Collector current (d.c.) Collector current (peak value) Total power dissipation up to Tamb = 25 C Storage temperature Junction temperature THERMAL RESISTANCE From junction to ambient CHARACTERISTICS Tj = 25 C unless otherwise specified Collector cut-off current IE = 0; VCB = 200 V Collector-emitter voltage RBE = 2,7 kW ; VCE = 250 V RBE = 2,7kW ; VCE = 200V; Tj = 150C Saturation voltage IC = 30 mA; lB = 5 mA D.C. current gain IC = 25 mA; VCE = 20 V Transition frequency at f = 35 MHz lC = 10 mA; VCE = 10 V Feedback capacitance at f = 1 MHz IC = 0; VCE = 30 V VCB0 VCE0 VCER VEB0 IC ICM Ptot Tstg Tj BF820 max. 300 max. - max. 300 max. max. max. max. max. BF822 250 V 250 V --V V mA mA mW C C 5 50 100 250 -55 to +150 150 Rth j-a BF820 500 K/W BF822 ICB0 ICER ICER < < < 10 50 10 0,6 50 60 1,6 10 nA 50 nA 10 mA V VCEsat < hFE fT Cre > > < MHz pF |
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